江志诚

博士后

中国科学技术大学核科学技术学院

邮箱：jiang_zc@ustc.edu.cn

主要经历：

2018年本科毕业于电子科技大学

2023毕博士业于中国科学院上海微系统与信息技术研究所

2023年10月开始于中国科学技术大学从事博士后工作

科研方向：

新型拓扑量子材料和非常规超导材料的电子结构研究

基于先进光源的束线及实验站设计与建设

代表文章：

1.  1.   Jiang Zhicheng^#, Ma Haiyang^#, Xia Wei^#, Qian Xiao, Zhengtai Liu, Zhonghao Liu, Yichen Yang, Jianyang Ding, Zhe Huang, Jiayu Liu, Yuxi Qiao, Jishan Liu, Yingying Peng, Soohyun Cho, Ynafeng Guo, Jianpeng Liu, Dawei Shen. “Observation of electronic nematicity driven by three-dimensional charge density wave in kagome lattice KV₃Sb₅”. Nano Letters, 23, 5625-5633 (2023).

2.      Jiang Zhicheng^#, Liu Zhengtai^#, Ma Haiyang^#, Xia Wei^#, Zhonghao Liu, Jishan Liu, Soohyun Cho, Yichen Yang, Jianyang Ding, Jiayu Liu, Zhe Huang, Yuxi Qiao, Ynafeng Guo, Jianpeng Liu, Dawei Shen. “Flat bands, non-trivial band topology and electronic nematicity in layered kagome-lattice RbTi₃Bi₅”. Nature Communications, 14, 4892 (2023).

3.      Luo Jiangfan^#, Tong Qiwei^#, Jiang Zhicheng^#, Bai Hui, Wu Jinsong, Liu Xiaolin, Xie Shen, Ge Haoran, Zhao Yan, Liu Yong, Hong Min, Shen Dawei, Wei Liu, Xinfeng Tang. “Exploring the Epitaxial Growth Kinetics and Anomalous Hall Effect in Magnetic Topological Insulator MnBi₂Te₄ Films”. ACS Nano, 17, 19022-19032 (2023).

4.      Jiang Zhicheng, Liu Jiayu, Liu Zhengtai, Shen Dawei. A review of angle-resolved photoemission spectroscopy study on topological magnetic material family of MnBi₂Te₄[J]. Electronic Structure, 4, 043002 (2022).

5.      Huan Shuchun^#, Zhang Shihao^#, Jiang Zhicheng^#, Hao Su, Hongyuan Wang, Xin Zhang, Yichen Yang, Zhengtai Liu, Xia Wang, Na Yu, Zhiqiang Zou, Dawei Shen, Jianpeng Liu, Yanfeng Guo. Multiple Magnetic Topological Phases in Bulk van der Waals Crystal MnSb₄Te₇[J]. Physical Review Letters (Editor’s suggestion), 126, 246601 (2021).

6.      Chen Bo^#, Wang Dinghui^#, Jiang Zhicheng^#, Bo Zhang^#, Shengtao Cui, Hangkai Xie, Yong Zhang, Muhammad Naveed, Yu Du, Xuefeng Wang, Haijun Zhang, Fucong Fei, Dawei Shen, Zhe Sun, Fengqi Song. Coexistence of ferromagnetism and topology by charge carrier engineering in the intrinsic magnetic topological insulator MnBi₄Te₇[J]. Physical Review B, 104, 075134 (2021).